The ZNBG series of devices are designed to meet the bias requirements of GaAs and HEMT FETs commonly used in satellite receiver LNBs, PMR cellular telephones etc. with a minimum of external components.
With the addition of two capacitors and a resistor the devices provide drain voltage and current control for three external grounded source FETs, generating the regulated negative rail required for FET gate biasing whilst operating from a single supply. This negative bias, at -3 volts, can also be used to supply other external circuits.
The ZNBG3210/11 includes bias circuits to drive up to three external FETs. A control input to the device selects either one of two FETs as operational using 0V gate switching methodology, the third FET is permanently active. This feature is particularly used as an LNB polarisation switch. Also specific to LNB applications is the enhanced 22kHz tone detection and logic output feature which is used to enable high and low band frequency switching. The detector has been specifically designed to reject inerference such as low frequency signals and DiSEqC tone bursts - without the use of additional external components.
Drain current setting of the ZNBG3210/11 is user selectable over the range 0 to 15mA, thisis achieved with the addition of a single resistor. The series also offers the choice of FET drain voltage, the 3210 gives 2.2 volts drain whilst the 3211 gives 2 volts.
These devices are unconditionally stable over the full working temperature with the FETs in place, subject to the inclusion of the recommended gate and drain capacitors. These ensure RF stability and minimal injected noise.
It is possible to use less than the devices full complement of FET bias controls, unused drain and gate connections can be left open ircuit without affecting operation of the remaining bias circuits.
In order to protect the external FETs the
Required Field 
